il420/ il4208 document number 83629 rev. 1.4, 26-apr-04 vishay semiconductors www.vishay.com 1 i179035 1 2 3 6 5 4 mt2 mt1 nc a c nc optocoupler, phototriac output, high dv/dt, low input current features ? high input sensitivity i ft = 2.0 ma 600/800 v blocking voltage 300 ma on-state current high static dv/dt 10 kv/ s inverse parallel scrs provide commutating dv/dt > 10 kv/ s very low leakage < 10 a isolation test voltage 5300 v rms small 6-pin dip package lead-free component component in accordance to rohs 2002/95/ec and weee 2002/96/ec agency approvals ul1577, file no. e52744 system code h or j, double protection csa -93751 babt/ bsi iec60950 iec60065 din en 60747-5-2 (vde0884) din en 60747-5-5 pending available with option 1 applications solid-state relays industrial controls office equipment consumer appliances. description the il420/ il4208 consists of a gaas irled optically coupled to a photosensitive non-zero crossing triac network. the triac consists of two inverse parallel connected monolithic scrs. these three semicon- ductors are assembled in a six pin dual in-line pack- age. high input sensitivity is achieved by using an emitter follower phototransistor and a cascaded scr pre- driver resulting in an led trigger current of less than 2.0 ma (dc) the il420/ il4208 used two discrete scrs resulting in a commutating dv/dt of greater than 10 k/ s. the use of a proprietary dv/dt clam results in a static dv/ dt of greater than 10 kv/ s. this clamp circuit has a mosfet that is enhanced when high dv/dt spikes occur between mt1 and mt2 of the triac. when conducting, the fet clamps the base of the pho- totransistors, disabling the firs stage scr predriver the 600/800 v blocking voltage permits control of off- line voltages up to 240 vac, with a safety factor of more than two, and is sufficient for as much as 380 vac. the il420/ il4208 isolates low-voltage logic from 120, 240, and 380 vac lines to control resistive, inductive, or capacitive lo ads including motors, sole- noids, high current thyristors or triac and relays. order information for additional information on t he available options refer to option information. part remarks il420 600 v v drm , dip-6 il4208 800 v v drm , dip-6 IL420-X006 600 v v drm , dip-6 400 mil (option 6) il420-x007 600 v v drm , smd-6 (option 7) il420-x009 600 v v drm , smd-6 (option 9) il4208-x007 800 v v drm , smd-6 (option 7) il4208-x009 800 v v drm , smd-6 (option 9)
www.vishay.com 2 document number 83629 rev. 1.4, 26-apr-04 il420/ il4208 vishay semiconductors absolute maximum ratings t amb = 25 c, unless otherwise specified stresses in excess of the absolute maximum ratings can caus e permanent damage to the device. f unctional operation of the device is not implied at these or any other conditions in excess of those given in the operati onal sections of this document. exposure to absolute maximum rating for extended periods of the time can adversely affect reliability. input output coupler 1) between emitter and detector, climate per din 50014, part 2, nov. 74 2) index per din iec 60112/vde 0303 part 1, group iiia per din vde 6110 parameter test condition symbol value unit reverse voltage v r 6.0 v forward current i f 60 ma surge current i fsm 2.5 a power dissipation p diss 100 mw derate from 25 c 1.33 mw/c parameter test condition part symbol value unit peak off-state voltage il420 v drm 600 v il4208 v drm 800 v rms on-state current i tm 300 ma single cycle surge current i tsm 3.0 a power dissipation p diss 500 mw derate from 25 c 6.6 mw/c parameter test condition symbol value unit isolation test voltage 1) t = 1.0 sec. v iso 5300 v rms pollution degree (din vde 0109) 2 creepage distance 7.0 mm clearance 7.0 mm comparative tracking 2) 175 isolation resistance v io = 500 v, t amb = 25 c r io 10 12 ? v io = 500 v, t amb = 100 c r io 10 11 ? storage temperature range t stg - 55 to + 150 c ambient temperature range t amb - 55 to + 100 c soldering temperature max. 10 sec. dip soldering 0.5 mm from case bottom t sld 260 c
il420/ il4208 document number 83629 rev. 1.4, 26-apr-04 vishay semiconductors www.vishay.com 3 electrical characteristics t amb = 25 c, unless otherwise specified minimum and maximum values are testing requirements. typical val ues are characteristics of the device and are the result of eng ineering evaluation. typical values are for information only and are not part of the testing requirements. input output coupler parameter test condition symbol min ty p. max unit forward voltage i f = 10 ma v f 1.16 1.35 v reverse current v r = 6.0 v i r 0.1 10 a input capacitance v f = 0 v, f = 1.0 mhz c in 40 pf thermal resistance, junction to ambient r thja 750 c/w parameter test condition part symbol min ty p. max unit off-state voltage i d(rms) = 70 a il420 v d(rms) 424 460 v i d(rms) = 70 a il4208 v d(rms) 565 v repetitive peak off-state voltage i drm = 100 s il420 v drm 600 v il4208 v drm 800 v off-state current v d = v drm, , t a = 100 c i bd 10 100 a on-state voltage i t = 300 ma v tm 1.7 30 v on-current pf = 1.0, v t(rms) = 1.7 v i tm 300 ma surge (non-repetitive) on-state current f = 50 hz i tsm 3.0 a holding current i h 65 500 a latching current v t = 2.2 v i l 5.0 ma led trigger current v ak = 5.0 v i ft 1.0 2.0 trigger current temperature gradient ? i ft / ? t j 7.0 14 a/c critical state of rise off-state voltage v d = 0.67 v drm , t j = 25 c dv/dt cr 1000 v/ s v d = 0.67 v drm , t j = 80 c dv/dt cr 5000 v/ s critical rate of rise of voltage at current commutation v d = 0.67 v drm , di/dt crq 15 a/ms , t j = 25 c dv/dt crq 10000 v/ s v d = 0.67 v drm , di/dt crq 15 a/ms , t j = 80 c dv/dt crq 5000 v/ s critical state of rise of on-state current di/dt cr 8.0 a/ s thermal resistance, junction to ambient r thja 150 c/w parameter test condition symbol min ty p. max unit critical rate of rise of coupled input/output voltage i t = 0 a, v rm = v dm = v d(rms) dv/dt 500 v/ s capacitance (input-output) f = 1.0 mhz, v io = 0 v c io 0.8 pf isolation resistance v io = 500, t a = 25 c r io 10 12 ? v io = 500, t a = 100 c r io 10 11 ?
www.vishay.com 4 document number 83629 rev. 1.4, 26-apr-04 il420/ il4208 vishay semiconductors switching characteristics typical characteri stics (tamb = 25 c unless otherwise specified) parameter test condition symbol min ty p. max unit turn-on time v rm = v dm = v d(rms) t on 35 s pf = 1.0, i t = 300 ma t off 50 s figure 1. forward voltage vs. forward current figure 2. peak led current vs. duty factor, tau iil420_01 100 10 1 .1 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 if - forward current - ma vf - forward voltage - v ta = -55c ta = 25c ta = 85c iil420_02 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 100 1000 10000 t -led pulse duration -s if(pk) - peak led current - ma .005 .05 .02 .01 .1 .2 .5 duty factor t df = /t iil420_03 100 80 60 40 20 0 -20 -40 -60 0 50 100 150 ta - ambient temperature - c led - led power - mw iil420_04 i t = f(v t ), parameter: t j
il420/ il4208 document number 83629 rev. 1.4, 26-apr-04 vishay semiconductors www.vishay.com 5 figure 5. current reduction figure 6. current reduction figure 7. typical trigger delay time iil420_05 i trms =f(t a ), r thja =150 k/w device switch soldered in pcb or base plate. iil420_06 i trms =f(t pin5 ), r thjCpin5 =16.5 k/w thermocouple measurement must be performed potentially separated to a1 and a2. measuring junction as near as possible at the case. iil420_07 t gd =f (i f i ft 25c), v d =200 v, parameter: t j figure 8.typicaloffstatecurrent figure 9.powerdissipation figure 10.pulsetriggercurrent iil420_08 i d =f (t j ), v d =600 v, parameter: t j iil420_09 for 40 to 60 hz line operation, p tot =f(i trms ) iil420_10 i ftn =f (t pif )i ftn normalized to i ft , referring to t pif )i 1.0 ms, v op =200 v, f=40 to 60 hz typ.
www.vishay.com 6 document number 83629 rev. 1.4, 26-apr-04 il420/ il4208 vishay semiconductors package dimensions in inches (mm) i178014 .008 (.20) .012 (.30) .130 (3.30) .150 (3.81) .130 (3.30) .150 (3.81) .033 (0.84) typ. .300 (7.62) typ. .033 (0.84) typ. .100 (2.54) typ .039 (1.00) min. .018 (0.46) .020 (0.51) .048 (1.22) .052 (1.32) .248 (6.30) .256 (6.50) .335 (8.50) .343 (8.70) pin one id 6 5 4 1 2 3 18 3C9 .300C.347 (7.62C8.81) 4 typ . iso method a 0 7 (7. 8 ) 9 1 ( 7.4 ) 7 (10.36) 9 1 (9.96) .300 (7.62) typ .
il420/ il4208 document number 83629 rev. 1.4, 26-apr-04 vishay semiconductors www.vishay.com 7 ozone depleting subst ances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performanc e of our products, processes, distribution and operatingsystems with respect to their impact on the hea lth and safety of our empl oyees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the cl ean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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